DEPOSITION AND CHARACTERIZATION OF A-SI:H FILMS DOPED (N-TYPE OR P-TYPE) DEPOSITION AND CHARACTERIZATION OF A-SI:H FILMS DOPED (N-TYPE OR P-TYPE)

Abstract

Hydrogenated amorphous silicon (a-Si:H) is a promising material in the photovoltaic industry due to its high absorption coefficient and low manufacturing cost. The optical and electrical properties of a-Si:H doped p-type or n-type films were studied: transmittance, absorption coefficient, conductivity, activation energy, and thickness. The films were fabricated through plasma enhanced chemical vapor deposition (PECVD) at low frequency with a substrate temperature of 300°C by varying the flow of hydrogen and dopant gases. The characterization of the films was completed using electrical characterization techniques, optical transmission, and UV-visible ellipsometry. The results show that hydrogenated amorphous silicon is a good alternative for the manufacture of photovoltaic devices.